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| SMBTA56/MMBTA56 PNP Silicon AF Transistor * Low collector-emitter saturation voltage * Complementary type: SMBTA06 / MMBTA06(NPN) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 3 1 2 Type SMBTA56/MMBTA56 Marking s2G 1=B Pin Configuration 2=E 3=C Package SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS 79C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1Pb-containing 2For Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Symbol RthJS Value 80 80 4 500 1 100 200 330 150 -65 ... 150 Value 215 Unit V mA A mA mW C Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBTA56/MMBTA56 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 80 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 V(BR)CBO V(BR)EBO I CBO 80 4 - A Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 80 V, IE = 0 VCB = 80 V, IE = 0 , TA = 150 C I CEO h FE - 0.1 20 0.1 - Collector-emitter cutoff current VCE = 60 V, IB = 0 - DC current gain1) IC = 10 mA, VCE = 1 V IC = 100 mA, V CE = 1 V 100 100 VCEsat VBE(ON) - 0.25 1.2 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA - Base-emitter voltage1) IC = 100 mA, V CE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse fT Ccb - 100 7 - MHz pF test: t < 300s; D < 2% 2 2007-04-19 SMBTA56/MMBTA56 DC current gain hFE = (IC) VCE = 1 V EHP00852 Collector-emitter saturation voltage IC = (VCEsat), hFE = 10 10 3 mA EHP00850 10 3 h FE 100 C 10 2 25 C C 100 C 25 C -50C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 3 10 0 0.0 0.5 V V CEsat 1.0 C Base-emitter saturation voltage IC = (V BEsat), hFE = 10 10 3 mA EHP00849 Collector current I C = (V BE) VCE = 1V EHP00846 10 3 C 10 2 5 100 C 25 C -50 C mA C 10 2 5 100 C 25 C -50 C 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.5 1.0 V V BEsat 1.5 10 -1 0 0.5 1.0 V BE V 1.5 3 2007-04-19 SMBTA56/MMBTA56 Collector cutoff current ICBO = (TA) VCB = 80 V EHP00851 Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz 10 3 MHz fT 5 EHP00848 10 4 nA CBO 10 3 5 10 2 5 10 1 5 10 0 5 10 -1 0 50 max 10 2 typ 5 100 TA C 150 10 1 10 0 5 10 1 5 10 2 mA 10 3 C Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) 65 pF 55 Total power dissipation Ptot = (TS) 360 mW 300 270 CCB(CEB ) 50 45 40 35 Ptot CEB CCB 240 210 180 30 25 20 15 10 5 0 0 4 8 12 16 V 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 22 VCB(VEB) C 150 TS 4 2007-04-19 SMBTA56/MMBTA56 Permissible Pulse Load RthJS = (tp ) Permissible Pulse Load Ptotmax/P totDC = (tp) 10 3 K/W 10 4 10 2 Ptotmax/ P totDC 10 3 10 1 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 10 -1 -7 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -6 10 1 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2007-04-19 Package SOT23 SMBTA56/MMBTA56 Package Outline 0.15 MIN. 1 0.1 0.1 MAX. 1.3 0.1 2.9 0.1 3 B 2.4 0.15 10 MAX. 0.4 +0.1 -0.05 1) 1 2 10 MAX. C 0.95 1.9 0.08...0.1 A 5 0...8 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 6 2007-04-19 SMBTA56/MMBTA56 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-19 |
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